多铁性BiFeO3薄膜中复杂畴组态的亚埃尺度研究

多铁性BiFeO₃薄膜中复杂畴组态的亚埃尺度研究

石彤彤，耿皖荣，朱银莲，唐云龙，宫风辉，陈雨亭，刘嘉琦，马秀良^*

（1.中国科学院金属研究所沈阳材料科学国家研究中心，辽宁沈阳110016；2.中国科学技术大学材料科学与工程学院，辽宁沈阳110016；3.松山湖材料实验室，广东东莞523808；4.兰州理工大学有色金属先进加工与循环国家重点实验室，甘肃兰州730050）

摘  要 本文利用透射电子显微镜对外延生长的BiFeO₃/DyScO₃ [110]_O薄膜中复杂畴组态进行了细致的研究。衬度分析表明薄膜中存在由锯齿状畴和界面纳米畴组成的复杂畴。像差校正电镜研究发现锯齿状畴的顶点通常位于180°畴壁、109°畴壁和71°畴壁的交点，纳米畴位于薄膜与衬底的界面位置。且界面处存在纳米尺寸缺陷，分析得出这种界面纳米缺陷促进了纳米畴的形成，进而诱导复杂畴结构的形成。

关键词铁酸铋薄膜；畴组态；铁电畴壁；缺陷；透射电子显微镜

中图分类号：TB383; O77; TG115. 21⁺ 5. 3 

文献标识码：Adoi:10.3969/j.issn.1000-6281.2021.05.006

Study of complex domain configurationinmultiferroic BiFeO₃ thin film

SHI Tong-tong^1，2, GENG Wan-rong³, ZHU Yin-lian³, TANG Yun-long¹,GONG Feng-hui^1，2, CHEN Yu-ting^1，2, LIU Jia-qi^1，2, MA Xiu-liang^1，4*

(1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang Liaoning 110016; 2. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang Liaoning 110016; 3. Songshan Lake Materials Laboratory, Dongguan Guangdong 523808; 4. State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Lanzhou Gansu 730050, China)

Abstract  The complex domain configuration in epitaxial BFO thin film grown on /DSO(110)_O substrates has been investigatedby transmission electron microscopy. Contrast analyses show that complex domains compose of zigzag domains and interfacial nanodomains in the thin film. An aberration-correction electron microscopy study showed that the vertices of the serrated domains areusually located at the intersection of the 180°, 109°, and 71° domains, and the nanodomains are located at the interface between the thin film and the substrate. Moreover, nano-sized defects were found at the interface, and it was found that the interface nano-defects promoted the formation of nanodomains. The formation of complex domain structures was also inducedin this paper.

Keywords  BFO thin film; domain configuration; ferroelectric domain wall; lattice defects；transmission electron microscope

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