热处理对CuO纳米线生长的影响
谢立林1，赵 慧1，张晓娜1*，汪 友1，张 泽2
（1.北京工业大学固体微结构与性能研究所，北京 100124；2.浙江大学 电子显微镜中心，硅材料国家重点实验室，材料科学与工程学院，浙江 杭州 310027）
摘 要 本文通过热氧化法制备了CuO纳米线，利用X射线衍射和扫描电子显微镜，研究了温度和冷却方式对CuO纳米线生长的影响。600°C空冷样品只长出了少量CuO纳米线，600°C炉冷样品上观察到了大量CuO纳米线，400°C空冷样品上也生长了大量CuO纳米线，表明CuO纳米线的实际生长温度不高于400°C。温度比较高时，以CuO层的生长为主；在温度比较低时，以CuO纳米线的生长为主。这一结果可以通过铜离子在氧化层中的扩散过程来理解。
关键词 氧化铜纳米线；热氧化法；生长；扩散
中图分类号：TB383.1；TN304.05 文献标识码：A doi:10.3969/j.issn.1000-6281.2016.05.004
Effect of heat treatment on the growth of CuO nanowires
XIE Li-lin1，ZHAO Hui1，ZHANG Xiao-na1 *，WANG You1，ZHANG Ze2
(1. Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124;2. Center of Electron Microscopy, Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou Zhejiang 310027, China)
Abstract In this paper, CuO nanowires were prepared by thermal oxidation method. The effect of temperature and cooling methods on the growth of CuO nanowires were studied through scanning electron microscopy and X-ray diffraction. A few CuO nanowires were obtained in the air cooling sample after heating at 600℃, while a large number of CuO nanowires were observed in sample cooling in furnace at 600℃. Besides, there were many nanowires in the air cooling sample after heating at 400℃.It could be concluded that the growth temperature of CuO nanowires was not higher than 400℃. CuO layer got growth when the temperature was higher than 400℃, and the growth of CuO nanowires mainly occurred at lower temperature. These results could be understood by the diffusion of Cu ion in the oxidation layer. The main diffusion ways of Cu ion are lattice diffusion and grain boundary diffusion, which correspond to the higher temperature and the lower temperature, respectively. Lattice diffusion would result in the growth of CuO layer while grain boundary diffusion would result in the growth of CuO nanowires.
Keywords copper oxide nanowires; thermal oxidation method; growth; diffusion
全文请到万方数据库、同方知网数据库或重庆维普数据库等数据库中下载！
[1] WU H, LIN D, PAN W. Fabrication, assembly, and electrical characterization of CuO nanofibers[J]. Applied Physics Letters，2006，89(13):133125.
[2] MACDONALD A H. Superconductivity - copper oxides get charged up[J]. Nature，2001，414(6862)：409-410.
[3] BEDNORZ J G, MULLER K A. Possible high Tc superconductivity in the Ba-La-Cu-O system[J]. Zeitschrift Für Physik:b，Condensed Matter，1986，64(2):189-193.
[4] FORSYTH J B, BROWN P J, WANKLYN B M. Magnetism in cupric oxide[J]. Journal of Physics C: Solid State Physics，1988，21(15):2917.
[5] YANG B X, THURSTON T R, SHIRANE G. Magnetic neutron scattering study of single-crystal cupric oxide[J]. Physical Review B Condensed Matter，1989，39(7):4343-4349.
[6] REITZ J B, SOLOMON E I. Propylene Oxidation on Copper Oxide Surfaces: Electronic and Geometric Contributions to Reactivity and Selectivity[J]. Journal of the American Chemical Society，1998，120(44)：11467-11478.
[7] LIAO L, ZHANG Z, WU T,et al. Multifunctional CuO nanowire devices: p-type field effect transistors and CO gas sensors[J].Nanotechnology，2009，20(8):164-171.
[8] LANZA F, FEDUZI R, FUGER J. Effects of lithium oxide on the electrical properties of CuO at low temperatures [J]. Journal of Materials Research，1990，5(8):1739-1744.
[9] JIANG X C, HERRICKS T, XIA Y N. CuO nanowires can be synthesized by heating copper substrates in air[J]. Nano Letters，2002，2(12):1333-1338.
[10]HSIEH C T, CHEN J M, SHIH H C,et al. Synthesis of well-ordered CuO nanofibers by a self-catalytic growth mechanism[J]. Applied Physics Letters，2003，82(19):3316.
[11]GONÇALVES A B, CAMPOS L C, FERLAUTO A S,et al. On the growth and electrical characterization of CuO nanowires by thermal oxidation[J]. Journal of Applied Physics，2009，106(3):34303.
[12]KUMAR A, SRIVASTAVA A K, TIWARI P,et al. The effect of growth parameters on the aspect ratio andnumber density of CuO nanorods[J]. Journal of Physics: Condensed Matter，2004，16(47):8531-8543.
[13]HUANG L S, YANG S G, LU Y N, et al. Preparation of large-scale cupric oxide nanowires by thermal evaporation method[J]. Journal of Crystal Growth，2004，260(12):130-135.
[14]XU C H, WOO C H, SHI S Q. Formation of CuO nanowires on Cu foil[J]. Chemical Physics Letters，2004，399(1-3):62-66.
[15]HANSEN B J, CHAN H, CHEN J,et al. Short-circuit diffusion growth of long bi-crystal CuO nanowires[J]. Chemical Physics Letters，2011，504(1/2/3):41-45.
[16]YUAN L, WANG Y, MEMA R,et al. Driving force and growth mechanism for spontaneous oxide nanowire formation during the thermal oxidation of metals[J]. Acta Materialia，2011，59(6):2491-2500.
[17]ZHU Y F, MIMURA K, ISSHIKI M,et al.Brief review of oxidation kinetics of copper at 350 degrees C to 1050 degrees C[J]. Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science，2006，37A(4):1231-1237.
[18] ZHU Y F, MIMURA K, ISSHIKI M. Oxidation mechanism of copper at 623-1073 K[J]. Materials Transactions，2002，43(9):2173-2176.
