Mo基底的粗糙度对C轴择优取向AlN的影响
柯 盼，彭 赏，郑 赫，贾双凤，王建波*
（（武汉大学物理科学与技术学院，电子显微镜中心，人工微结构教育部重点实验室和高等研究院，湖北 武汉 430072）
摘 要 通过物理气相沉积的方法制备出Si/非晶/Mo/AlN多层膜器件，利用透射电子显微学方法研究了截面样品和AlN薄膜平面样品，确定了AlN和Mo的界面形态和生长方式。研究表明二者取向关系为 [2-1-10]AIN,[-111]Mo,(0020)AIN和(110)Mo ，且Mo表面的粗糙程度对AlN的生长有影响，因此本文为改进器件性能提供了参考方向。
关键词 取向关系；AlN；透射电子显微学；柱状晶
中图分类号：TB34；O766+.1；TG115.21+5.3 文献标识码：A doi:10.3969/j.issn.1000-6281.2016.04.004
Effect of substrate roughness on C-oriented AlN thin films
KE Pan，PENG Shang，ZHENG He，JIA Shuang-feng，WANG Jian-bo*
(School of Physics and Technology, Center for Electron Microscopy，MOE Key Laboratory of Artificial Micro- and Nano-structures，and Institute for Advanced Studies Wuhan University，Wuhan Hubei 430072，China)
Abstract Four-layer Si/amorphous/Mo/AlN device was made by Physical Vapor Deposition. The interface morphology of Mo/AlN and the growth model was identifiedby using the transmission electron microscopy. The results show that Tthe local epitaxial orientation relationships between AlN and Mo are [2-1-10]AIN,[-111]Mo,(0020)AIN and (110)Mo .The coarse surface of Mo is bad for c-oriented AlN thin films.This research can serve as a guidance for improving the performance of the device.
Keywords orientation relationship；AlN；transmission electron microscopy；columnar grains
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